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| Datasheet File OCR Text: |
| PROCESS Power Transistor NPN - Darlington Chip CP147 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 5 INCH WAFER 280 PRINCIPAL DEVICE TYPES MJ11012 2N6282 MJ11014 2N6283 MJ11016 2N6284 EPITAXIAL BASE 195 X 195 MILS 12 MILS 29 X 29 MILS 61 X 35 MILS Al - 30,000A Ti/Ni/Au - Ni-6,000A; Au-6,000A BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (1 -August 2002) Central TM PROCESS CP147 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (1 -August 2002) |
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